20:07
máy tính nguyên vũ
The low-impedance drive design is adopted and speaker drive capacity is heightened.
DC clean drive by bb-5 is possible for buffer amplifier and the power amplifier first rank.
New HDAM (a gilding specification and high-speed voltage amplification module) of a newly developed four-layers substrate structure which realizes high S/N is adopted.
The output stage has parallel push pull composition which adopted the RF large-sized power transistor.
| Form | Stereo power amplifier |
| Input/output terminal | Line input: One line Balance input: One line Speaker output: One line |
| Output power (20Hz - 20kHz) | 200W+200W (4ohm) 100W+100W (8ohm) 400W (at the time of 8 ohms and the BTL interconnection) |
| THD | 0.005% |
| Frequency characteristic | 10Hz-100kHz+0 -1 dB |
| SN ratio | 120dB |
| Input sensitivity/impedance | 1.5V/10kohm |
| Power consumption | 500W (Electrical Appliance and Material Control Law) |
| The maximum Dimensions | Width 454x height 201x depth of 450mm |
| Weight | 33.0kg |
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