22:39
máy tính nguyên vũ
The unification part of SE series and newly developed technologies including a high-speed module are supplied, and S/N on Hearing impression and the further improvement in speaker drive capacity are aimed at.
A total of ten HDAM which is the high-speed voltage amplification modules which realize an exact signal amplification in several seconds is adopted.
Thereby, a feeling of density and speediness of play sound are improved.
The new model MOS FET was selected carefully to the power block, and it has adopted by the parallel push pull.
The electric-current drive capacity to exceed the time of a triple push pull using of conventional MOS FET by this is acquired.
By combining HDAM with 4-unit active volume, the volume part has expanded the gain variable span sharply. Moreover, by adopting a resistor rotation type as volume component partses, and considering it as a low-impedance specification, S/N at the time of a real using is raised.
The low double foil chemicon with a copper shielding, the top cover of the 70micro foil printed circuit board, a silicon steel board shielding board, a sub- die-casting panel, a copper plating die-casting chassis, and 3mm thickness, etc. are adopted, and shielding capacity and vibration suppression nature are raised.
The large-sized toroidal power transformer is adopted as a power-source part.
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| Form | Stereo Integrated Amplifier | ||||
| Output power |
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| THD | 0.005% | ||||
| Frequency characteristic | 10Hz-100kHz+0 -1 dB | ||||
| SN ratio | High Level:111dB | ||||
| Input terminal | compact-disk balance input: One line
Line input: Four lines Phono input: One line DCC, a Tape input: Three lines |
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| Output-terminal | DCC, a Tape output: Three lines Speaker output: One line |
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| Power consumption | 350W (Electrical Appliance and Material Control Law) | ||||
| Dimensions | Width 454x height 170x depth of 460mm | ||||
| Weight | 26.0kg |
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